2025/08/29
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2025/08/05
NOVOSENSE has officially launched NPM12017A series, new-generation 12V common-drain dual N-channel MOSFET in CSP package. This product line represents a perfect upgrade and expansion to NOVOSENSE’s existing mass-produced CSP MOSFET portfolio. NPM12017A delivers further optimized performance, significantly enhanced electrical characteristics, and superior ruggedness. Taking the flagship product NPM12017A as an example, it achieves 26% reduction in typical on-resistance (Ron), approximate 30% improvement in temperature rise, and nearly 50% enhancement in ruggedness performance (such as short-circuit and avalanche withstand capabilities), reaching world-class benchmarks. Leveraging NOVOSENSE’s proprietary 12-inch wafer process, NPM12017A not only offers exceptional cost efficiency but also ensures sufficient production capacity.
Building upon the outstanding ruggedness and mechanical strength of its predecessor NPM12023A, the new series effectively addresses common challenges facing traditional CSP MOSFETs, including low mechanical strength, limited avalanche energy tolerance, and manufacturing & assembly difficulties. Designed for portable lithium battery management applications such as smartphones, tablets, and wearables, NPM12017A series provides a safer and more reliable solution that helps customers simplify design process.
Excellent performance helps meet high-power and miniaturization requirements of lithium battery protection systems
With fast-charging power for smartphones, tablets, and other portable devices soaring from 3-5W to over 100W, manufacturers and end-users increasingly demand higher charging power/current capabilities. This trend necessitates the use of MOSFETs having ultra-low Ron to minimize power loss in battery charge/discharge paths, thereby enhancing overall battery system performance.
The next-generation NPM12017A in CSP package, built upon NOVOSENSE’s proprietary innovative chip architecture adopted in its predecessor, features further optimized design. Compared to the previous generation, NPM12017A achieves 26% lower Ron in the same package size, and about 30% reduction in temperature rise. These improvements significantly cut down power consumption, system temperature rise and heat generation, placing the device at the forefront of industry performance. In addition, NPM12017A delivers a 40% improvement in short-circuit capability (with short-circuit current up to 400A) and a 67% enhancement in avalanche energy withstand capability (up to 50A). The perfect balance of ultra-low impedance and superior electrical robustness makes it an ideal solution for providing more comprehensive and reliable protection of lithium battery systems.
Key parameters of NPM12017A
In addition, NPM12017A overcomes the limitations of conventional CSP package in terms of mechanical robustness and avalanche energy tolerance. It can withstand mechanical stress exceeding 60N, effectively preventing warpage and die cracking during manufacturing and assembly and significantly enhancing product reliability and safety.
Leading design overcomes limitations of conventional package technology
As portable lithium battery-powered devices continue to evolve toward miniaturization and slim form factors, more demanding footprint requirements are posed for systems, particularly MOSFETs. In traditional wafer-level dual N-channel MOSFET products in CSP package, the resistance of silicon substrate constitutes a significant proportion of the total resistance in battery management applications. To reduce substrate resistance, manufacturers typically employ chip thinning processes. However, this approach significantly compromises mechanical strength of products, leading to warpage, deformation, and even cracking during production and assembly, ultimately resulting in application failures. Some solutions attempt to address insufficient mechanical strength by adding thickness with other materials, but this increases costs and introduces risks of material incompatibility.
NOVOSENSE’s new CSP-packaged MOSFET series has been optimized at the initial design stage to address these challenges. By modifying the device structure to make the conduction current flow parallel to the chip surface, the current path is shortened, thereby reducing Ron. This fundamentally addresses the mechanical strength limitation of CSP-packaged MOSFETs while maintaining slim and compact form factors. The design minimizes deformation and die cracking during chip usage, ensuring product reliability and safety.
NOVOSENSE’s CSP package structure vs. conventional CSP package structure
Simplifying system design to accelerate time-to-market
NOVOSENSE’s new CSP-packaged MOSFETs not only achieve breakthroughs in performance but also features optimized design. Its common-drain dual N-channel structure simplifies circuit design, and allows pin-to-pin replacement of the previous-generation NPM12023A to enable seamless performance upgrades while significantly shortening development cycles to accelerate time-to-market for customers’ high-performance products.
NOVOSENSE CSP serious product selection guide
Additional product specifications under this platform are currently in development. Going forward, NOVOSENSE will continue to expand its product portfolio with more diversified offerings. Please contact us for inquiries and further details.
