GaN Integrated Power Stage & Gate Driver
Compared with conventional Si-based power devices, GaN HEMTs feature higher switching frequency and lower switching loss, and have broad applications in markets such as fast charging, data centers, solar inverter, energy storage, and electric vehicles. However, GaN HEMTs have a narrow gate-source withstand voltage range and a low turn-on threshold, which makes them sensitive to the disturbance and noise in driver circuits, and the high dv/dt causes common-mode interference, which bring much higher requirements on gate driver IC. NOVOSENSE has launched dedicated driver IC for GaN HEMT and Integrated Power Stage products with high reliability, high common-mode transient immunity (CMTI) and low propagation delay to help fully leverage the performance benefits of GaN HEMTs.
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