NSG65N15K is a half-bridge GaN power stage IC , which integrates a half-bridge driver NSD2621 and two 650V/150mR GaN HEMT. The NSG65N15K has a built-in bootstrap diode and features adjustable dead-time, undervoltage protection, etc. These functions help to realize the safe and reliable operation of GaN, and giving full play to its characteristic advantages of high frequency and high speed.
Product Features
- Integrated 650V GaN HEMT and half-bridge driver
- GaN conduction resistance 150mΩ
- Non-reverse recovery loss
- Built-in LDO makes the driver voltage more stable and reliable
- High/low side independent UVLO protection
- Internal adjustable dead time
- Built-in bootstrap diode
- Operation ambient temperature: -40°C ~125°C
- Package form: QFN32 9mm*9mm
Application
- Half-bridge or full-bridge topologies such as totem poles PFC, ACF and LLC
- Adapter high-density power supply
- PV, motor driver and ESS
Functional Block Diagram
For more product information, please contact us.
